Charge ordering in the metal-insulator transition of V-doped CrO2 in the rutile structure

被引:8
|
作者
Biswas, Sarajit [1 ]
机构
[1] Taki Govt Coll, Dept Phys, North 24, Parganas 743429, W Bengal, India
关键词
Rutile CrO2; Spintronics devices; Magnetoresistive random access memory (MRAM); First-principles calculations; Local density approximations (LDA); ELECTRON FERROMAGNETISM; SPIN POLARIZATION; MEMORY; GAS;
D O I
10.1007/s00894-018-3647-2
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Electronic, magnetic, and structural properties of pure and V-doped CrO2 were extensively investigated utilizing density functional theory. Usually, pure CrO2 is a half-metallic ferromagnet with conductive spin majority species and insulating spin minority species. This system remains in its half-metallic ferromagnetic phase even at 50% V-substitution for Cr within the crystal. The V-substituted compound Cr0.5V0.5O2 encounters metal-insulator transition upon the application of on-site Coulomb repulsion U = 7 eV preserving its ferromagnetism in the insulating phase. It is revealed in this study that Cr3+-V5+ charge ordering accompanied by the transfer of the single V-3d electron to the Cr-3dt(2g) orbitals triggers metal-insulator transition in Cr0.5V0.5O2. The ferromagnetism of Cr0.5V0.5O2 in the insulating phase arises predominantly due to strong Hund's coupling between the occupied electrons in the Cr-t(2g) states. Besides this, the ferromagnetic Curie temperature (T-c) decreases significantly due to V-substitution. Interestingly, a structural distortion is observed due to tilting of CrO6 or VO6 octahedra across the metal-insulator transition of Cr0.5V0.5O2.
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页数:9
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