Optimized Adder Cells for Ternary Ripple-Carry Addition

被引：8

作者：

Faghih Mirzaee, Reza ^{[1
]}

Navi, Keivan ^{[2
]}

机构：

[1] Islamic Azad Univ, Sci & Res Branch, Dept Comp Engn, Tehran, Iran

[2] Shahid Beheshti Univ, Fac Elect & Comp Engn, GC, Tehran, Iran

来源：

IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS | 2014年 / E97D卷 / 09期

关键词：

Ternary Full Adder; Ternary Half Adder; Ternary Ripple-Carry Adder; CNTFET nanoelectronics; MULTIPLE-VALUED LOGIC; CIRCUITS; DESIGN;

D O I：

10.1587/transinf.2013LOP0007

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The unique characteristic of Ternary ripple-carry addition enables us to optimize Ternary Full Adder for this specific application. Carbon nanotube field effect transistors are used in this paper to design new Ternary Half and Full Adders, which are essential components of Ternary ripple-carry adder. The novel designs take the sum of input variables as a single input signal, and generate outputs in a way which is far more efficient than the previously presented similar structures. The new ripple-carry adder operates rapidly, with high performance, and low-transistor-count.

引用

页码：2312 / 2319

页数：8

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