The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals

被引:7
作者
Cho, Hyon-Jong [1 ]
Lee, Bo-Young
Lee, Jeong Yong
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] LG Siltron, R&D Ctr, Gyeongbuk 730724, South Korea
关键词
convection; heat transfer; magnetic fields; point defects; Czochralski method; semiconducting silicon;
D O I
10.1016/j.jcrysgro.2006.04.023
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Variation of growth parameters such as the crystal rotation rate, the crucible rotation rate and the configuration of cusp magnetic fields results in the increase or the decrease of critical growth rate V*, transition from interstitial to vacancy, of Czochralski (CZ)-grown silicon crystals. It can also make axially asymmetric distributions of grown-in microdefect regions. V* is remarkably increased in some range of the crystal rotation rate and the crucible rotation rate, which are likely to depend on crucible shape, size and melt volume. The crystal rotation rate as well as the crucible rotation rate affects the incorporation of point defects into the growing crystal through modification of the melt convection. Variation of the configuration of cusp magnet also can increase V* since it affects the melt temperature field. Significant results of interstitial-rich region at crystal center and vacancy-rich region at crystal edge are given in the minority carrier life-time map. These effects are directly caused by the change of heat flow in the melt, controlled with the crystal rotation rate, the crucible rotation rate and the magnetic configuration. The axial temperature gradient in the crystal near the crystal-melt interface is indirectly affected by heat flow through the crystal-melt interface. In addition, the novel technique, the unbalanced magnetic technique, is proposed to control heat transfer and oxygen transfer separately. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:260 / 265
页数:6
相关论文
共 16 条
  • [1] Asymmetric distributions of grown-in microdefects in Czochralski silicon
    Cho, HJ
    Sim, BC
    Lee, JY
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 458 - 463
  • [2] EIDENZON AM, 1989, KRISTALLOGTAFIYA, V34, P461
  • [3] EIDENZON AM, 1997, IAN SSSR NEORG MATER, V33, P272
  • [4] FALSTER RA, Patent No. 5919302
  • [5] Oxygen transportation during Czochralski silicon crystal growth
    Hoshikawa, K
    Huang, XM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 72 (2-3): : 73 - 79
  • [6] Growth parameters determining the type of grown-in defects in Czockralski silicon crystals
    Hourai, M
    Kajita, E
    Nagashima, T
    Fujiwara, H
    Umeno, S
    Sadamitsu, S
    Miki, S
    Shigematsu, T
    [J]. ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1713 - 1718
  • [7] HOURAI M, Patent No. 6245430
  • [8] Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth I. Rotation effect
    Kim, JS
    Lee, TY
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 219 (03) : 205 - 217
  • [9] Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography
    Ma, M
    Irisawa, T
    Ogawa, T
    Huang, XM
    Taishi, T
    Hoshikawa, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 296 - 304
  • [10] Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF
    Okui, M
    Nishimoto, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 (237-239) : 1651 - 1656