Composition dependent resonant Raman scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy multiquantum wells

被引：2

作者：

Lazic, S. ^{[1
]}

Calleja, J. M.

Hey, R.

Ploog, K.

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

RECENT DEVELOPMENTS IN ADVANCED MATERIALS AND PROCESSES | 2006年 / 518卷

关键词：

InxGa1-xAs1-y multiquantum wells; local vibration modes; resonant Raman scattering;

D O I：

10.4028/www.scientific.net/MSF.518.17

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm(-1). Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

引用

页码：17 / 22

页数：6

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