In-situ X-ray μLaue diffraction study of copper through-silicon vias

被引：2

作者：

Sanchez, Dario Ferreira ^{[1
,2
]}

Reboh, Shay ^{[1
,2
]}

Weleguela, Monica Larissa Djomeni ^{[1
,2
]}

Micha, Jean-Sebastien ^{[2
,3
,4
,5
]}

Robach, Odile ^{[2
,3
,4
,5
]}

Mourier, Thierry ^{[1
,2
]}

Gergaud, Patrice ^{[1
,2
]}

Bleuet, Pierre ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] CEA Grenoble, INAC, 17 Rue Martyrs, F-38054 Grenoble, France

[4] CNRS, SPrAM, 17 Rue Martyrs, F-38054 Grenoble, France

[5] ESRF, CRG IF, BM32, BP 220, F-38043 Grenoble 9, France

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 56卷

关键词：

Through silicon vias (TSVs); Microelectronics reliability; Copper extrusion; Laue micro-diffraction; HIGH-ASPECT-RATIO; THERMAL-STRESSES; MICRODIFFRACTION; IMPACT; INTERCONNECTS; RELIABILITY; DIFFUSION; BEAM;

D O I：

10.1016/j.microrel.2015.10.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we developed an original in-situ strain investigation of a Cu through silicon vias (TSVs) sample using X-ray mu Laue diffraction mapping. We perform an in-situ investigation of a Cu TSV sample. Three different stages were analysed: (i) at room temperature, (ii) during an annealing at 400 degrees C and, (iii) at room temperature again after the annealing. In combination with analytical and Finite Element Method analysis, the Cu extrusion and grain growth are identified and quantified, and, their effects on the measured Si strain fields are discussed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：78 / 84

页数：7

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