In-situ X-ray μLaue diffraction study of copper through-silicon vias

被引：2

作者：

Sanchez, Dario Ferreira ^{[1
,2
]}

Reboh, Shay ^{[1
,2
]}

Weleguela, Monica Larissa Djomeni ^{[1
,2
]}

Micha, Jean-Sebastien ^{[2
,3
,4
,5
]}

Robach, Odile ^{[2
,3
,4
,5
]}

Mourier, Thierry ^{[1
,2
]}

Gergaud, Patrice ^{[1
,2
]}

Bleuet, Pierre ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] CEA Grenoble, INAC, 17 Rue Martyrs, F-38054 Grenoble, France

[4] CNRS, SPrAM, 17 Rue Martyrs, F-38054 Grenoble, France

[5] ESRF, CRG IF, BM32, BP 220, F-38043 Grenoble 9, France

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 56卷

关键词：

Through silicon vias (TSVs); Microelectronics reliability; Copper extrusion; Laue micro-diffraction; HIGH-ASPECT-RATIO; THERMAL-STRESSES; MICRODIFFRACTION; IMPACT; INTERCONNECTS; RELIABILITY; DIFFUSION; BEAM;

D O I：

10.1016/j.microrel.2015.10.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we developed an original in-situ strain investigation of a Cu through silicon vias (TSVs) sample using X-ray mu Laue diffraction mapping. We perform an in-situ investigation of a Cu TSV sample. Three different stages were analysed: (i) at room temperature, (ii) during an annealing at 400 degrees C and, (iii) at room temperature again after the annealing. In combination with analytical and Finite Element Method analysis, the Cu extrusion and grain growth are identified and quantified, and, their effects on the measured Si strain fields are discussed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：78 / 84

页数：7

共 40 条

[1]

Alvarez-Murga M, 2012, PHYS REV LETT, V109, DOI 10.1103/PhysRevLett.109.025502

[2] Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy [J].

Bayat, Parisa ;

Vogel, Dietmar ;

Rodriguez, Raul D. ;

Sheremet, Evgeniya ;

Zahn, Dietrich R. T. ;

Rzepka, Sven ;

Michel, Bernd .

MICROELECTRONIC ENGINEERING, 2015, 137 :101-104

[3] Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits [J].

Budiman, A. S. ;

Shin, H. -A. -S. ;

Kim, B. -J. ;

Hwang, S. -H. ;

Son, H. -Y. ;

Suh, M. -S. ;

Chung, Q. -H. ;

Byun, K. -Y. ;

Tamura, N. ;

Kunz, M. ;

Joo, Y. -C. .

MICROELECTRONICS RELIABILITY, 2012, 52 (03) :530-533

[4] Microscopy - Extra dimension with X-rays [J].

Cargill, GS .

NATURE, 2002, 415 (6874) :844-845

[5] Analysis of high aspect ratio Through Silicon Via (TSV) diffusion and stress impact profile during 3D advanced integration [J].

Djomeni, L. ;

Mourier, T. ;

Minoret, S. ;

Fadloun, S. ;

Barnes, J-P ;

Rouchon, D. ;

Burgess, S. ;

Price, A. ;

Vandroux, L. ;

Mathiot, D. .

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 4, 2014, 61 (03) :219-226

[6] Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias [J].

Djomeni, Larissa ;

Mourier, Thierry ;

Minoret, Stephane ;

Fadloun, Sabrina ;

Piallat, Fabien ;

Burgess, Steve ;

Price, Andrew ;

Zhou, Yun ;

Jones, Christopher ;

Mathiot, Daniel ;

Maitrejean, Sylvain .

MICROELECTRONIC ENGINEERING, 2014, 120 :127-132

[7] Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric [J].

Frank, T. ;

Moreau, S. ;

Chappaz, C. ;

Leduc, P. ;

Arnaud, L. ;

Thuaire, A. ;

Chery, E. ;

Lorut, F. ;

Anghel, L. ;

Poupon, G. .

MICROELECTRONICS RELIABILITY, 2013, 53 (01) :17-29

[8] An overview of through-silicon-via technology and manufacturing challenges [J].

Gambino, Jeffrey P. ;

Adderly, Shawn A. ;

Knickerbocker, John U. .

MICROELECTRONIC ENGINEERING, 2015, 135 :73-106

[9] ELECTRONIC EFFECTS IN ELASTIC CONSTANTS OF N-TYPE SILICON [J].

HALL, JJ .

PHYSICAL REVIEW, 1967, 161 (03) :756-&

[10] Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication [J].

Heryanto, A. ;

Putra, W. N. ;

Trigg, A. ;

Gao, S. ;

Kwon, W. S. ;

Che, F. X. ;

Ang, X. F. ;

Wei, J. ;

Made, R. I. ;

Gan, C. L. ;

Pey, K. L. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (09) :2533-2542

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