Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots:: Efficient P→S Auger relaxation of electrons

被引：71

作者：

Narvaez, Gustavo A. ^{[1
]}

Bester, Gabriel ^{[1
]}

Zunger, Alex ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 07期

关键词：

TEMPERATURE-DEPENDENCE; PSEUDOPOTENTIAL THEORY; INTRABAND ABSORPTION; ENERGY RELAXATION; PHONON BOTTLENECK; DYNAMICS; CAPTURE; TIME; DECAY;

D O I：

10.1103/PhysRevB.74.075403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the P-shell-to-S-shell decay lifetime tau (P -> S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of tau (P -> S)similar to 1-7 ps for dots of different sizes. Our calculated Auger-type P-shell-to-S-shell decay lifetimes tau (P -> S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as both electrons and holes are present there is no need for an alternative polaron mechanism.

引用

页数：7

共 55 条

[1]

[Anonymous], 1987, LANDOLT BORNSTEIN A, V22a

[2] Exciton lifetime in InAs/GaAs quantum dot molecules [J].