Inhomogeneous charging and screening effects in semiconductor quantum dot arrays -: art. no. 81

The electronic properties of quantum dot (QD) arrays are strongly influenced by the Coulomb interaction of electrons within the dot as well as with those in neighbouring dots. In this paper, we investigate this behaviour taking into account screening by a free electron gas in the vicinity of the QDs. We find pronounced effects for standard capacitance - voltage ( CV) measurements of QD structures embedded in a pn-diode. In particular, we show that the three-dimensional nature of the problem is crucial for devices with low dot-density, whereas the self-consistency between electron depletion in the bulk layer and dot occupation is important for high dot-densities. The Coulomb interaction between the dots induces a broadening of the peaks in the CV characteristic which is comparable with the effect of disordered QD arrays, where we considered realistic size and position fluctuations obtained by a kinetic Monte Carlo simulation.