Quasicontinuum Monte Carlo: A method for surface growth simulations

被引:21
|
作者
Russo, G [1 ]
Sander, LM
Smereka, P
机构
[1] Univ Catania, Dipartimento Matemat & Informat, I-95125 Catania, Italy
[2] Univ Michigan, Michigan Ctr Theoret Phys, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[4] Univ Michigan, Dept Math, Ann Arbor, MI 48109 USA
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 12期
关键词
D O I
10.1103/PhysRevB.69.121406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We introduce an algorithm for treating growth on surfaces which combines important features of continuum methods (such as the level-set method) and kinetic Monte Carlo (KMC) simulations. We treat the motion of adatoms in continuum theory, but attach them to islands one atom at a time. The technique is borrowed from the dielectric breakdown model. Our method allows us to give a realistic account of fluctuations in island shape, which is lacking in deterministic continuum treatments and which is an important physical effect. Our method should be most important for problems close to equilibrium where KMC becomes impractically slow.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Application of Monte Carlo Method in System Reliability Simulations
    Yuan, Zihou
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON INFORMATION AND MANAGEMENT SCIENCES, 2009, 8 : 673 - 675
  • [42] The Multilevel Monte Carlo Method for Simulations of Turbulent Flows
    Chen, Qingshan
    Ming, Ju
    MONTHLY WEATHER REVIEW, 2018, 146 (09) : 2933 - 2947
  • [43] Floating Block Method for Quantum Monte Carlo Simulations
    Sarkar, Avik
    Lee, Dean
    Meissner, Ulf-G.
    PHYSICAL REVIEW LETTERS, 2023, 131 (24)
  • [44] Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface
    Akis, R
    Ferry, DK
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) : 345 - 348
  • [45] Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films
    Pandey, Sumeet C.
    Singh, Tejinder
    Maroudas, Dimitrios
    JOURNAL OF CHEMICAL PHYSICS, 2009, 131 (03):
  • [46] MONTE-CARLO SIMULATIONS OF THE GROWTH OF THIN METAL FILMS AND OSCILLATION OF SURFACE STEP DENSITY
    Kaneko, T.
    Yamamoto, R.
    MOLECULAR SIMULATION, 1991, 6 (4-6) : 325 - 332
  • [47] Kinetic Monte Carlo simulations of the surface roughening of binary systems
    Bentz, DN
    Betush, WJ
    Jackson, KA
    JOURNAL OF CRYSTAL GROWTH, 2003, 250 (1-2) : 162 - 165
  • [48] Molecular exchange Monte Carlo: A generalized method for identity exchanges in grand canonical Monte Carlo simulations
    Barhaghi, Mohammad Soroush
    Torabi, Korosh
    Nejahi, Younes
    Schwiebert, Loren
    Potoff, Jeffrey J.
    JOURNAL OF CHEMICAL PHYSICS, 2018, 149 (07):
  • [49] MONTE-CARLO SIMULATIONS OF CO HYDROGENATION ON A (0001) SURFACE
    HOVI, JP
    LAHTINEN, J
    VAARI, J
    NIEMINEN, RM
    SURFACE SCIENCE, 1994, 311 (03) : 331 - 336
  • [50] Monte Carlo simulations of the adsorption of potassium on a Cu(111) surface
    Padilla-Campos, L
    Toro-Labbé, A
    JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (15): : 6458 - 6465