Rabi oscillations and photocurrent in quantum-dot tunnelling junctions

被引:6
作者
Fainberg, Boris [1 ,2 ]
Nitzan, Abraham [2 ]
机构
[1] Holon Inst Technol, Fac Sci, IL-58102 Holon, Israel
[2] Tel Aviv Univ, Sch Chem, IL-69978 Tel Aviv, Israel
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 05期
关键词
D O I
10.1002/pssa.200881287
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Motivated by the experiments by Zrenner et al. [Nature 418, 612 (2002)], we study the influence of relaxation processes on converting Rabi oscillations in a strongly biased single-quantum-dot photodiode into deterministic photocurrents. We show that the behavior of a quantum dot with different tunnel rates for electron and holes is qualitatively different from that with the equal tunnel rates: in the latter case the current shows attenuating oscillations with the Rabi frequency. In contrast, for different electrons and holes tunnelling rates, the frequency of these oscillations diminishes, and they disappear beyond a definite asymmetry threshold. We give an analytical solution of the problem and a numerical example showing a different behaviour of the transferred charge in the small attenuation limit for equal and different tunnel rates for electrons and holes. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:948 / 951
页数:4
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