Evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix prepared by reactive pulsed laser deposition

被引：3
|
作者：
Fang, Fang [1 ]
Zhang, Wei [1 ]
Sun, Jian [1 ]
Xu, Ning [1 ]
Zhu, Jiang [1 ]
Ying, Zhifeng [1 ]
Wu, Jiada [1 ]
机构：
[1] Fudan Univ, State Key Lab Adv Photon Mat & Devices, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
来源：
JOURNAL OF MATERIALS RESEARCH | 2009年 / 24卷 / 07期
基金：
中国国家自然科学基金;
关键词：
SILICON NANOCRYSTALS; VISIBLE LUMINESCENCE; FILMS; STATES; SPECTROSCOPY; FABRICATION;
D O I：
10.1557/JMR.2009.0279
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) properties of SiOx, thin films deposited by pulsed laser ablation of Si in a reactive oxygen ambient and annealed in a nitrogen atmosphere were Studied at room temperature. Raman spectroscopy, Fourier transform infrared spectroscopy, and optical transmission measurements were used to characterize the deposited films before and after annealing and complement the PL Studies. Strong PL clue 10 quantum confinement was observed at room temperature from Si nanocrystals with ail average diameter of approximately 5 nm at 325-nm light excitation. An apparent dependence of PL oil the oxygen pressure for film deposition was observed. A detailed analysis of the effects of the annealing temperature revealed a significant PL evolution ill luminescence intensity, spectrum profile, peak position, and spectrum range with the annealing temperature ranging from 300 to 1200 degrees C. Structural variations induced by thermal annealing of the films deposited at different oxygen pressures were also discussed on the basis of their correlation with the PL evolution.
引用
收藏
页码：2259 / 2267
页数：9
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