A Ferroelectric Oxide Made Directly on Silicon

被引：340

作者：

Warusawithana, Maitri P. ^{[1
]}

Cen, Cheng ^{[2
]}

Sleasman, Charles R. ^{[2
]}

Woicik, Joseph C. ^{[3
]}

Li, Yulan ^{[4
]}

Kourkoutis, Lena Fitting ^{[5
]}

Klug, Jeffrey A. ^{[6
]}

Li, Hao ^{[7
]}

Ryan, Philip ^{[8
]}

Wang, Li-Peng ^{[9
,10
]}

Bedzyk, Michael ^{[6
,11
]}

Muller, David A. ^{[5
]}

Chen, Long-Qing ^{[4
]}

Levy, Jeremy ^{[2
]}

Schlom, Darrell G. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[3] NIST, Gaithersburg, MD 20899 USA

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[6] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[7] Motorola Inc, Appl Res & Technol Ctr, Tempe, AZ 85284 USA

[8] Ames Lab, Ames, IA 50011 USA

[9] Intel Corp, Santa Clara, CA 95052 USA

[10] TricornTech, San Jose, CA 95129 USA

[11] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

SCIENCE | 2009年 / 324卷 / 5925期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; PEROVSKITE FILMS; ULTRATHIN FILMS; SRTIO3; MULTILAYERS; THICKNESS; GROWTH;

D O I：

10.1126/science.1169678

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

引用

页码：367 / 370

页数：4

共 32 条

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