GaN/AlGaN high electron mobility transistors with fτ of 110GHz

被引：93

作者：

Micovic, M ^{[1
]}

Nguven, NX ^{[1
]}

Janke, P ^{[1
]}

Wong, WS ^{[1
]}

Hashimoto, P ^{[1
]}

McCray, LM ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 04期

关键词：

D O I：

10.1049/el:20000296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of 50nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2A/mm. an extrinsic f(tau) of 110GHz and an f(max) of over 140GHz. The f(tau), of 110GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record.

引用

页码：358 / 359

页数：2

共 8 条

[1]

CHU K, IN PRESS IEEE ELECTR

[2] GaN materials for high power microwave amplifiers [J].

Eastman, LF ;

Chu, K ;

Smart, J ;

Shealy, JR .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :3-7

[3] AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs) [J].

Fan, ZF ;

Lu, CZ ;

Botchkarev, AE ;

Tang, H ;

Salvador, A ;

Aktas, O ;

Kim, W ;

Morkoc, H .

ELECTRONICS LETTERS, 1997, 33 (09) :814-815

[4] AlGaN-GaN heterostructure FETs with offset gate design [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Khan, MA ;

Shur, MS ;

Ping, A ;

Adesida, I .

ELECTRONICS LETTERS, 1997, 33 (14) :1255-1257

[5] High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates [J].

Sheppard, ST ;

Doverspike, K ;

Pribble, WL ;

Allen, ST ;

Palmour, JW ;

Kehias, LT ;

Jenkins, TJ .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :161-163

[6]

Wang R., 1996, 1996 International Conference on GaAs Manufacturing Technology. Digest of Papers, P46

[7]

WU Y, 1997, 55 ANN DEV RES C FOR

[8] Short-channel Al0.5Ga0.5N/GaN MODFETs with power density >3W/mm at 18GHz [J].

Wu, YF ;

Keller, BP ;

Fini, P ;

Pusl, J ;

Le, M ;

Nguyen, NX ;

Nguyen, C ;

Widman, D ;

Keller, S ;

Denbaars, SP ;

Mishra, UK .

ELECTRONICS LETTERS, 1997, 33 (20) :1742-1743

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