Performance of a low noise front-end ASIC for Si/CdTe detectors in compton gamma-ray telescope

被引：71

作者：

Tajima, H ^{[1
]}

Nakamoto, T

Tanaka, T

Uno, S

Mitani, T

Silva, EDE

Fukazawa, Y

Kamae, T

Madejski, G

Marlow, D

Nakazawa, K

Nomachi, M

Okada, Y

Takahashi, T

机构：

[1] Stanford Linear Accelerator Ctr, Menlo Pk, CA 94095 USA

[2] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

[3] Princeton Univ, Princeton, NJ 08544 USA

[4] Osaka Univ, Toyonaka, Osaka 5600043, Japan

[5] Univ Tokyo, Bunkyo Ku, Tokyo 1130033, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 03期

关键词：

Analog integrated circuits; cadmium telluride; Compton camera; gamma-ray detectors; silicon radiation detectors;

D O I：

10.1109/TNS.2004.829394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (application-specific integrated circuit), VA32TA, to realize this goal for the readout of double-sided silicon strip detector (DSSD) and cadmium telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV [full-width at half-maximum (FWHM)] for 60 and 122 keV at 0degrees C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.

引用

页码：842 / 847

页数：6

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