Mask error tensor and causality of mask error enhancement for low-k1 imaging:: theory and experiments

被引：9

作者：

Chen, CK ^{[1
]}

Gau, TS ^{[1
]}

Shin, JJ ^{[1
]}

Liu, RG ^{[1
]}

Yu, SS ^{[1
]}

Yen, A ^{[1
]}

Lin, BJ ^{[1
]}

机构：

[1] Taiwan Semiconductor Mfg Co Ltd, Exploratory Micropatterning Technol Dept, Micropatterning Technol Div, Hsinchu, Taiwan

来源：

JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2004年 / 3卷 / 02期

关键词：

optical lithography; MEF; mask error enhancement factor; mask; depth of focus; line end;

D O I：

10.1117/1.1669508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three important concepts about the mask error enhancement factor (MEEF) are proposed. From the definition of MEEF, it could be derived as a function of the image log slope and the aerial image variation caused by mask critical dimension (CD) errors. Second, a mask error common window indicator (MECWIN) is proposed to evaluate the MEEF and mask CD specification by knowing the wafer CD tolerance. This concept is used to define the mask CD specification without any ambiguity. Finally, we describe the complex 2-D response to the mask-making error around the line end by a mask error enhancement tensor. Both theoretical derivations and experiments to justify the theory are presented. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

引用

页码：269 / 275

页数：7

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