The different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes

被引:25
作者
Belyakov, AV
Vandamme, LKJ
Perov, MY
Yakimov, AV
机构
[1] Nizhni Novgorod State Univ, Nizhnii Novgorod 603950, Russia
[2] Eindhoven Univ Technol, Dept El Eng, NL-5600 MB Eindhoven, Netherlands
来源
FLUCTUATION AND NOISE LETTERS | 2003年 / 3卷 / 03期
关键词
light-emitting diodes; quantum dots; 1/f noise; burst noise; random telegraph signal; signal detection;
D O I
10.1142/S0219477503001403
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise in quantum dot diodes as well. Two different spectra decomposition techniques axe used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
引用
收藏
页码:L325 / L339
页数:15
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