Investigations of semiconductor devices using SIMS; diffusion, contamination, process control

被引：9

作者：

Lee, Jae Cheol ^{[1
]}

Won, Jeongyeon ^{[1
]}

Chung, Youngsu ^{[1
]}

Lee, Hyungik ^{[1
]}

Lee, Eunha ^{[1
]}

Kang, Donghun ^{[2
]}

Kim, Changjung ^{[2
]}

Choi, Jinhak ^{[3
]}

Kim, Jeomsik ^{[3
]}

机构：

[1] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 446712, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, Gyeonggi Do, South Korea

[3] Samsung Electromech, Cent Res Inst, Analyt Res Grp, Suwon 442743, Kyunggi Do, South Korea

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

SIMS; Process control; Contamination; Diffusion;

D O I：

10.1016/j.apsusc.2008.06.129

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have surveyed 22,155 analyses issues to know the portion of surface analysis at the total analyses activities. According to the survey result, the contribution of SIMS in the total analyses issues was about 7%. The portions of semiconductor process control, composition and contamination in the SIMS analyses issues are 25%, 29% and 16%, respectively. In this article, some examples of the semiconductor device process control, identification of contaminants, and failure analyses have been reviewed. The behavior of H, O, and Ti at the Pt/Ti/GaInZnO interfaces and their influences on the electrical property of thin film transistor are demonstrated. Also discolor issues including organic material contamination problem on Au pad are discussed in detail. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

引用

页码：1395 / 1399

页数：5

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