Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100)with Pt Top Electrode

被引：0

作者：

Sun, Qing-Qing ^{[1
]}

Laha, Apurba ^{[2
]}

Osten, H. Joerg ^{[2
]}

Ding, Shi-Jin ^{[1
]}

Zhang, David Wei ^{[1
]}

Fissel, A. ^{[3
]}

机构：

[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Leibniz Univ Hannover, Inst Elect Mat & Dev, D-30167 Hannover, Germany

[3] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capacitor composed of single crystalline Gd2O3 on Si(100) with Pt top electrode was fabricated by Molecular Beam Epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd2O3 is pinned at 4.75 eV and due to the lattice mismatch between Gd2O3, the interface state density is in the level of 10(13) extracted by Terman and conductance methods.

引用

页码：1268 / +

页数：2

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