Deposition of silicon nitride thin films by hot-wire CVD at 100 °C and 250 °C

被引：26

作者：

Alpuim, P. ^{[1
]}

Goncalves, L. M. ^{[2
]}

Marins, E. S. ^{[1
]}

Viseu, T. M. R. ^{[3
]}

Ferdov, S. ^{[1
]}

Bouree, J. E. ^{[4
]}

机构：

[1] Univ Minho, Dept Fis, P-4800058 Guimaraes, Portugal

[2] Univ Minho, Dept Elect Ind, P-4800058 Guimaraes, Portugal

[3] Univ Minho, Dept Fis, P-4710057 Braga, Portugal

[4] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 12期

关键词：

Hot-wire CVD; Silicon nitride; Dielectric; Low-temperature deposition; Electronic transport;

D O I：

10.1016/j.tsf.2009.01.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 angstrom/s) and at low substrate temperature. Films were deposited using NH(3)/SiH(4) flow rate ratios between 1 and 70 and substrate temperatures of 100 degrees C and 250 degrees C. For NH(3)/SiH(4) ratios between 40 and 70, highly transparent (T similar to 90%), dense films (2.56-2.74 g/cm(3)) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 angstrom/s and <0.5 angstrom/s were obtained for films deposited at 100 degrees C and 250 degrees C, respectively. Films deposited at both substrate temperatures showed electrical conductivity -10(-14) Omega(-1) cm(-1) and breakdown fields > 10 MV cm(-1). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3503 / 3506

页数：4

共 13 条

[1] Electronic transport in low-temperature silicon nitride [J].