Abnormal conductivity in low-angle twisted bilayer graphene

被引:76
作者
Zhang, Shuai [1 ,2 ]
Song, Aisheng [2 ]
Chen, Lingxiu [3 ]
Jiang, Chengxin [3 ]
Chen, Chen [3 ]
Gao, Lei [4 ]
Hou, Yuan [5 ]
Liu, Luqi [5 ]
Ma, Tianbao [2 ]
Wang, Haomin [3 ]
Feng, Xi-Qiao [1 ,2 ]
Li, Qunyang [1 ,2 ]
机构
[1] Tsinghua Univ, Dept Engn Mech, AML, CNMM, Beijing 100084, Peoples R China
[2] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[4] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
[5] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
MAGIC-ANGLE; ELECTRONIC STATES; MOIRE; SURFACE;
D O I
10.1126/sciadv.abc5555
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Controlling the interlayer twist angle offers a powerful means for tuning the electronic properties of two-dimensional (2D) van der Waals materials. Typically, the electrical conductivity would increase monotonically with decreasing twist angle owing to the enhanced coupling between adjacent layers. Here, we report a nonmonotonic angle-dependent vertical conductivity across the interface of bilayer graphene with low twist angles. More specifically, the vertical conductivity enhances gradually with decreasing twist angle up to a crossover angle at theta(c) approximate to 5 degrees, and then it drops notably upon further decrease in the twist angle. Revealed by density functional theory calculations and scanning tunneling microscopy, the abnormal behavior is attributed to the unusual reduction in average carrier density originating from local atomic reconstruction. The impact of atomic reconstruction on vertical conductivity is unique for low-angle twisted 2D van der Waals materials and provides a strategy for designing and optimizing their electronic performance.
引用
收藏
页数:7
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