Study of structural, electrical, magnetic and optical properties of 0.65BaTiO3-0.35Bi0.5Na0.5TiO3-BiFeO3 multiferroic composite
被引:59
作者:
Rawat, Meera
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, India
Rawat, Meera
[1
]
Yadav, K. L.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, India
Yadav, K. L.
[1
]
机构:
[1] Indian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, India
Conventional solid state reaction method was used to prepare (1 - x)[0.65BaTiO(3)-0.35Bi(0.5)Na(0.5)TiO(3)]xBiFeO(3) [where x = 0.0, 0.10, 0.15 and 0.20] composite. The presence of constituent phases in composite was confirmed by X-ray diffraction (XRD) studies. Average grain size was calculated by using field effect scanning electron microscope (FESEM) which increases from 356 nm to 577 nm with increase in ferrite content. Dielectric study confirms the presence of both ferroelectric and ferrite phases. We also found that the dielectric constant (epsilon) and Curie temperature (T-c) for ferrite phase increases with increase in the BiFeO3 content. Remnant polarization and coercive field for 0.65BaTiO(3)-0.35Bi(0.5)Na(0.5)TiO(3) are found to be 7.63 mu C/cm(2) and 9.55 kV/cm respectively, afterward these values decreases with increase in the ferrite content. Magnetic hysteresis were measured at temperature 300 K and 5 K using superconducting quantum interference device which shows that 0.65BaTiO(3)-0.35Bi(0.5)Na(0.5)TiO(3)-BiFeO3 has antiferromagnetic nature with unsaturated hysteresis loops so only able to obtain the magnetization (M-H) at 7 T. The antiferromagnetic nature of composite ceramics was also confirmed from the ZFC-FC curve. The presence of magnetocapacitance depicts the magnetoelectric coupling at room temperature. Impedance analysis provides the evidence of space charge accumulation in the samples, which vanish at higher frequencies and temperature. The electrical conductivity was observed to increase with rise in temperature which corresponds to the negative temperature coefficient of resistance (NTCR) behavior analogous to a semiconductor. Optical study shows that the band gap energies decrease with increase of BiFeO3 content. (C) 2014 Elsevier B. V. All rights reserved.
机构:
Ha Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, VietnamHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Dang Duc Dung
Nguyen The Hung
论文数: 0引用数: 0
h-index: 0
机构:
Ha Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Viet Nam Maritime Univ, Fac Basic & Fundamental Sci, Dept Phys, 484 Lach Tray St, Hai Phong City, VietnamHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Nguyen The Hung
Odkhuu, Dorj
论文数: 0引用数: 0
h-index: 0
机构:
Incheon Natl Univ, Dept Phys, Incheon 22012, South KoreaHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Xie, Yanchun
Wu, Xiaohang
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Wu, Xiaohang
Zhang, Yueli
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Wang, L.
Song, T. K.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Song, T. K.
论文数: 引用数:
h-index:
机构:
Lee, S. C.
论文数: 引用数:
h-index:
机构:
Cho, J. H.
Sung, Y. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Sung, Y. S.
Kim, M. -H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Kim, M. -H.
Choi, K. S.
论文数: 0引用数: 0
h-index: 0
机构:
Sunchon Natl Univ, Dept Phys Educ, Chungnam 540742, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
机构:
Ha Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, VietnamHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Dang Duc Dung
Nguyen The Hung
论文数: 0引用数: 0
h-index: 0
机构:
Ha Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Viet Nam Maritime Univ, Fac Basic & Fundamental Sci, Dept Phys, 484 Lach Tray St, Hai Phong City, VietnamHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
Nguyen The Hung
Odkhuu, Dorj
论文数: 0引用数: 0
h-index: 0
机构:
Incheon Natl Univ, Dept Phys, Incheon 22012, South KoreaHa Noi Univ Sci & Technol, Sch Engn Phys, Dept Gen Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Xie, Yanchun
Wu, Xiaohang
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Wu, Xiaohang
Zhang, Yueli
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Wang, L.
Song, T. K.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Song, T. K.
论文数: 引用数:
h-index:
机构:
Lee, S. C.
论文数: 引用数:
h-index:
机构:
Cho, J. H.
Sung, Y. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Sung, Y. S.
Kim, M. -H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Kim, M. -H.
Choi, K. S.
论文数: 0引用数: 0
h-index: 0
机构:
Sunchon Natl Univ, Dept Phys Educ, Chungnam 540742, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea