RF and Stability Performance of Double Gate Tunnel FET

被引：0

作者：

Sivasankaran, K. ^{[1
]}

Mallick, P. S. ^{[1
]}

Murali, N. ^{[1
]}

Kumar, Kiran ^{[1
]}

机构：

[1] VIT Univ, Sch Elect Engn, Vellore, Tamil Nadu, India

来源：

2012 INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2012年

关键词：

Radio Frequency; Tunnel FET; Stability Factor; Small-signal model; TCAD Simulation; NOISE PERFORMANCE; SOI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents radio frequency (RF) performance and high frequency stability of Double Gate Tunnel FET (DG TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG TFET is evaluated by extracting RF parameters like cut-off frequency (f(t)), maximum oscillation frequency (f(max)) and stability factor (K). The result shows that DG TFET has cut-off frequency of 350GHz and unconditionally stable from 11GHz onwards.

引用

页数：4

共 10 条

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