Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process

被引：1

作者：

Moon, Kiwon ^{[1
]}

Choi, Jeongyong ^{[1
]}

Shin, Jun-Hwan ^{[1
]}

Han, Sang-Pil ^{[1
]}

Ko, Hyunsung ^{[1
]}

Kim, Namje ^{[1
]}

Park, Jeong-Woo ^{[1
]}

Yoon, Young-Jong ^{[1
]}

Kang, Kwang-Yong ^{[2
]}

Ryu, Han-Cheol ^{[3
]}

Park, Kyung Hyun ^{[1
]}

机构：

[1] ETRI, Creat Future Res Lab, Taejon, South Korea

[2] Changwon Natl Univ, Ind Univ Cooperat Fdn, Chang Won, South Korea

[3] Sahmyook Univ, Dept Car Mechatron, Seoul, South Korea

来源：

ETRI JOURNAL | 2014年 / 36卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

LTG-GaAs; terahertz wave; photomixer;

D O I：

10.4218/etrij.13.0213.0319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter; we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be 540 degrees C to 580 degrees C for the initial excess arsenic density of 2x10(19)/cm(3) to 8x10(19)/cm(3).

引用

页码：159 / 162

页数：4

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