Multiscale Monte Carlo simulation of circular DC magnetron sputtering: Influence of magnetron design on target erosion and film deposition

被引：16

作者：

Kwon, Ui Hui

Lee, Won Jong

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin, Gyeonggi, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305101, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 11期

关键词：

magnetron sputtering; Monte Carlo simulation; erosion; deposition; topography; PARTICLE-TRANSPORT; DISCHARGE; ATOMS; THERMALIZATION; TOPOGRAPHY; GROWTH;

D O I：

10.1143/JJAP.45.8629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an experimental and computational study of the effect of magnetron design on the target erosion profile, wafer-level deposition uniformity, and feature-scale deposition topography in a circular DC magnetron sputtering system. We have conducted a multiscale Monte Carlo simulation consisting of a particle-in-cell Monte Carlo collision plasma simulation for target sputter erosion, a collisional transport simulation for film deposition, and a feature-scale deposition topography simulation. The entire simulation results for each step are verified in comparison with the experimental results for various process conditions. A new semiempirical calibration method, for converting an estimated ion current density distribution into a target erosion profile, is proposed with regard to the gas rarefaction effect due to sputtering wind. In conclusion, the whole performance indices of a circular DC magnetron sputtering system are substantially influenced by magnetron design, and the effectiveness of our multiscale Monte Carlo simulation methodology is validated.

引用

页码：8629 / 8638

页数：10

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