Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

被引：8
作者：
Das, Subhasis [1 ,2 ]
Dhar, S. [1 ]
机构：
[1] Univ Calcutta, Dept Elect Sci, 92 APC Rd, Kolkata 700009, India
[2] Univ Calcutta, Ctr Res Nanosci & Nanotechnol, JD Sect 3, Kolkata 700098, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 103卷
关键词：
MOLECULAR-BEAM EPITAXY; WANNIER EXCITONS; CONFINEMENT; DEPENDENCE; ABSORPTION;
D O I：
10.1016/j.spmi.2017.01.030
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ground state exciton binding energies (EBE) of heavy hole excitons in GaAs1-x-yBixNy-GaAs spherical quantum dots (QD) are calculated using a variational approach under 1s hydrogenic wavefunctions within the framework of effective mass approximation. Both the nitrogen and the bismuth content in the material are found to affect the binding energy, in particular for larger nitrogen content and lower dot radii. Calculations also show that the ground state exciton binding energies of heavy holes increase more at smaller dot sizes as compared to that for the light hole excitons. (C) 2017 Elsevier Ltd. All rights reserved.
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收藏
页码：145 / 150
页数：6
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