Adatom densities on GaAs: Evidence for near-equilibrium growth

被引：100

作者：

Tersoff, J

Johnson, MD

Orr, BG

机构：

[1] LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94551

[2] UNIV MICHIGAN,HARRISON M RANDALL LAB,ANN ARBOR,MI 48109

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.78.282

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We examine the equilibrium of a compound semiconductor surface under molecular beam epitaxy (MBE) conditions, both theoretically and experimentally. For GaAs, the Ga chemical potential and adatom density depend sensitively on As pressure as well as temperature. Our results suggest that MBE growth may take place under conditions much closer to equilibrium than has been believed. We also show that standard one-component models cannot, even in principle, reproduce both the adatom density and its temperature dependence.

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页码：282 / 285

页数：4

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