RF reactive sputter deposition and characterization of transparent CuAlO2 thin films

CuAlO2 thin films have been prepared on quartz glass and sapphire substrates by radio-frequency (RF) reactive sputtering using a CuAlO2 ceramic target. The deposition process was optimized by varying the sputter parameters, such as the substrate temperature and the oxygen flow. In addition a post-growth annealing has been carried out. X-ray diffraction (XRD) revealed that the as-sputtered films are amorphous, and crystallize in the delafossite-type CuAlO2 or in a phase mixture of CuAlO2 and CuAl2O4 after annealing in air at 1100 degrees C. The surface morphology of the films was characterized by scanning electron microscopy (SEM). The as-grown films are nearly stoichiometric in terms of Cu to Al ratio and have good depth homogeneity as examined by Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectroscopy (SIMS), respectively. The optical bandgap of the films was estimated by wavelength-dependent transmission measurements at room temperature, which revealed a direct bandgap of 3.38 and 3.80 eV for the as-sputtered and post-growth annealed CuAlO2 films, respectively.