Importance of substrate rotation speed on the growth of homogeneous ZnO thin films by reactive sputtering

被引：34

作者：

Jayaraman, Vinoth Kumar ^{[1
]}

Matsumoto Kuwabara, Yasuhiro ^{[1
]}

Maldonado Alvarez, Arturo ^{[1
]}

Olvera Amador, Maria de la Luz ^{[1
]}

机构：

[1] IPN, Ctr Invest & Estudios Avanzados, Dept Ingn Elect, Apartado Postal 14740, Mexico City 07738, DF, Mexico

来源：

MATERIALS LETTERS | 2016年 / 169卷

关键词：

ZnO; Substrate rotation speed; Thin films; Sputtering; DEPOSITION; TEMPERATURE;

D O I：

10.1016/j.matlet.2016.01.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped zinc oxide (ZnO) thin films were reactively deposited on soda-lime glass substrates by radio frequency (rf) sputtering at room temperature. We have studied the importance of substrate rotation speed on the structural, optical and morphological properties. The rotation speeds used were 0, 20, 40, 60, and 80 rpm. The XRD measurements confirmed that films were grown with (002) plane preferential orientation. The average transmittance was above 90% in the UV-vis region. The SEM images revealed that films deposited with substrate rotation are more homogeneous than the films deposited without rotation. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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