Photoluminescence from amorphous silica nanowires synthesized using TiN/Ni/SiO2/Si and TiN/Ni/Si substrates

被引：24
作者：
Lee, KH
Lofton, C
Kim, K
Seo, WS
Lee, Y
Lee, MH
Sigmund, W
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Korea Inst Ceram Engn & Technol, Adv Mat Anal & Evaluat Ctr, Seoul 153801, South Korea
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 131卷 / 11期
关键词：
silica nanowires; titanium nitride; photolumineseence;
D O I：
10.1016/j.ssc.2004.06.029
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence characteristics of amorphous silica nanowires (a-SiONWs) grown on TiN/Ni/Si and TiN/Ni/SiO2 substrates have been studied. A-SiONWs grown on TiN/Ni/Si substrates show a Si-rich composition compared to those grown from TiN/Ni/SiO2/Si. The emission characteristics of the nanowires were found to depend on the type of substrate. By annealing the a-SiONWs grown on TiN/Ni/Si in air, emission bands shift from blue to green bands. It is likely that silicon to oxygen ratio is an important factor in deciding the types of defects and emission bands of amorphous silica nanowires. (C) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：687 / 692
页数：6
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