Analysis and determination of the stress-optic coefficients of thin single crystal silicon samples

被引：36

作者：

He, S ^{[1
]}

Zheng, T ^{[1
]}

Danyluk, S ^{[1
]}

机构：

[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1774259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper summarizes the analysis of the influence of anisotropy on the stress-optic coefficients and the determination of the stress-optic tensor components pi(11)-pi(12) and pi(44) using an infrared polariscope and calibration with four-point bending of thin silicon samples. Values obtained are pi(11)-pi(12)=9.88x10(-13) Pa-1 and pi(44)=6.50x10(-13) Pa-1. A fringe multiplier was also introduced to increase the sensitivity of the infrared polariscope by up to seven times. (C) 2004 American Institute of Physics.

引用

页码：3103 / 3109

页数：7

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