6H and 4H-SiC Avalanche Photodiodes

被引：2

作者：

Rowland, L. B. ^{[1
]}

Wyatt, J. L. ^{[1
]}

Fronheiser, J. A. ^{[2
]}

Vert, A. V. ^{[2
]}

Sandvik, P. M. ^{[2
]}

Borsa, T. ^{[3
]}

Van Zeghbroeck, J. ^{[3
]}

Van Zeghbroeck, B. ^{[3
]}

Babu, S. ^{[4
]}

机构：

[1] Aymont Technol Inc, Ballston Spa, NY 12020 USA

[2] GE Global Res, Niskayuna, NY 12309 USA

[3] Univ Colorado, Boulder, CO 80301 USA

[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

avalanche photodiode; APD; a-plane; 11-20; photodiode; ultraviolet; sensor;

D O I：

10.4028/www.scientific.net/MSF.615-617.869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm(2) area on a-plane (11 (2) over bar0) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were Successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark Current was less than 1 pA at 0.5V(br) on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes.

引用

页码：869 / 872

页数：4

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