Characteristics of GaN and AlGaN/GaN FinFETs

被引：33

作者：

Im, Ki-Sik ^{[1
]}

Kang, Hee-Sung ^{[1
]}

Lee, Jae-Hoon ^{[2
]}

Chang, Sung-Jae ^{[3
]}

Cristoloveanu, Sorin ^{[3
]}

Bawedin, Maryline ^{[4
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea

[2] Samsung Elect Co Ltd, Syst LSI, Discrete Dev Team, Giheung, South Korea

[3] Grenoble Inst Technol, IMEP LAHC, F-38016 Grenoble 1, France

[4] Univ Montpellier 2, IES, F-34095 Montpellier, France

来源：

SOLID-STATE ELECTRONICS | 2014年 / 97卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN; MOSFET; Normally-off; FinFET; Junctionless; Nanochannel; FRINGING FIELDS; SOI MOSFETS; GATE; HETEROSTRUCTURES; PERFORMANCE; TRANSISTORS;

D O I：

10.1016/j.sse.2014.04.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN FinFETs, with high quality atomic layer deposited (ALD) Al2O3 gate dielectric, have been fabricated. The devices have a two-dimensional electron gas (2DEG) channel formed at AlGaN/GaN heterointerface and two sidewall GaN MOS channels. Two distinct transconductance peaks can be observed, one for the 2DEG channel and the other for the sidewall GaN MOS channels. On the other hand, we present heterojunction-free GaN FinFETs with junctionless configuration. The current flows through the volume of the heavily doped GaN fin rather than at the surface channel, which leads to superior off-state performance and less drain-induced virtual substrate biasing (DIVSB) effect. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：66 / 75

页数：10