Physics-Based Simulation of EM and SM in TSV-Based 3D IC Structures

被引：2

作者：

Kteyan, Armen ^{[1
]}

Sukharev, Valeriy ^{[2
]}

Zschech, Ehrenfried ^{[3
]}

机构：

[1] Mentor Graph Corp, Yerevan 0012, Armenia

[2] Mentor Graphics Corp, Fremont, CA 94538 USA

[3] Fraunhofer Inst Nondestruct Testing IZFP, D-01109 Dresden, Germany

来源：

STRESS INDUCED PHENOMENA AND RELIABILITY IN 3D MICROELECTRONICS | 2014年 / 1601卷

关键词：

stress migration; electromigration; TSV; vacancy; FEA simulation; THROUGH-SILICON; MECHANICAL-STRESS; ELECTROMIGRATION; MODEL; DEGRADATION;

D O I：

10.1063/1.4881345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Evolution of stresses in through-silicon-vias (TSVs) and in the TSV landing pad due to the stress migration (SM) and electromigration (EM) phenomena are considered. It is shown that an initial stress distribution existing in a TSV depends on its architecture and copper fill technology. We demonstrate that in the case of proper copper annealing the SM-induced redistribution of atoms results in uniform distributions of the hydrostatic stress and concentration of vacancies along each segment. In this case, applied EM stressing generates atom migration that is characterized by kinetics depending on the preexisting equilibrium concentration of vacancies. Stress-induced voiding in TSV is considered. EM induced voiding in TSV landing pad is analyzed in details.

引用

页码：114 / 127

页数：14

共 24 条

[1]

[Anonymous], INT REL PHYS S IPRS

[2] Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms [J].

Aziz, MJ .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2810-2812

[3] Raman Spectroscopy Analysis Of Mechanical Stress Near Cu-TSVs [J].

De Wolf, Ingrid .

STRESS MANAGEMENT FOR 3D ICS USING THROUGH SILICON VIAS: INTERNATIONAL WORKSHOP ON STRESS MANAGEMENT FOR 3D ICS USING THROUGH SILICON VIAS, 2011, 1378 :138-149

[4] A physically based model of electromigration and stress-induced void formation in microelectronic interconnects [J].