Random walk numerical simulation for solar cell applications

被引：41
作者：
Anta, Juan A. [1 ]
机构：
[1] Univ Pablo Olavide, Dept Sistemas Fis Quim & Nat, Seville 41013, Spain
来源：
ENERGY & ENVIRONMENTAL SCIENCE | 2009年 / 2卷 / 04期
关键词：
ELECTRON-DIFFUSION COEFFICIENT; TRANSIT-TIME DISPERSION; MONTE-CARLO; CHARGE RECOMBINATION; HOPPING TRANSPORT; CARRIER TRANSPORT; GRAIN MORPHOLOGY; TIO2; FILMS; SEMICONDUCTORS; DYNAMICS;
D O I：
10.1039/b819979e
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Numerical modelling based on random walk methods provides a very versatile tool to describe transport and recombination processes in solar cells made with disordered materials and nanostructured devices. These methods are especially suited to describe these systems since they are characterized by a wide dispersion of spatial and energy states.
引用
收藏
页码：387 / 392
页数：6
相关论文
共 63 条
  • [1] Properties of the electronic density of states in TiO2 nanoparticles surrounded with aqueous electrolyte
    Abayev, Ilana
    Zaban, Arie
    Kytin, Vladimir G.
    Danilin, Alexey A.
    Garcia-Belmonte, Germa
    Bisquert, Juan
    [J]. JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2007, 11 (05) : 647 - 653
  • [2] Charge transport model for disordered materials:: Application to sensitized TiO2 -: art. no. 125324
    Anta, JA
    Nelson, J
    Quirke, N
    [J]. PHYSICAL REVIEW B, 2002, 65 (12): : 1 - 10
  • [3] Interpretation of diffusion coefficients in nanostructured materials from random walk numerical simulation
    Anta, Juan A.
    Mora-Sero, Ivan
    Dittrich, Thomas
    Bisquert, Juan
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2008, 10 (30) : 4478 - 4485
  • [4] Combined effect of energetic and spatial disorder on the trap-limited electron diffusion coefficient of metal-oxide nanostructures
    Anta, Juan A.
    Morales-Florez, Victor
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (27) : 10287 - 10293
  • [5] Dynamics of charge separation and trap-limited electron transport in TiO2 nanostructures
    Anta, Juan A.
    Mora-Sero, Ivan
    Dittrich, Thomas
    Bisquert, Juan
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (37) : 13997 - 14000
  • [6] Charge-carrier transport in disordered organic solids
    Baranovskii, SD
    Cordes, H
    Hensel, F
    Leising, G
    [J]. PHYSICAL REVIEW B, 2000, 62 (12) : 7934 - 7938
  • [7] COULOMB GAP IN DISORDERED SYSTEMS - COMPUTER-SIMULATION
    BARANOVSKII, SD
    EFROS, AL
    GELMONT, BL
    SHKLOVSKII, BI
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (06): : 1023 - 1034
  • [8] Mechanism of charge recombination in dye-sensitized nanocrystalline semiconductors: Random flight model
    Barzykin, AV
    Tachiya, M
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (17) : 4356 - 4363
  • [9] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY
    BASSLER, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 175 (01): : 15 - 56
  • [10] Benkstein KD, 2003, J PHYS CHEM B, V107, P7759, DOI 10.1021/jp0226811
1234567