Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate

被引：19

作者：

Xiong Chuanbing ^{[1
]}

Jiang Fengyi ^{[1
]}

Fang Wenqing ^{[1
]}

Wang Li ^{[1
]}

Liu Hechu ^{[1
]}

Mo Chunnan ^{[1
]}

机构：

[1] Nanchang Univ, Engn Res Ctr Luminescence Mat & Devices, Educ Minist, Nanchang 330047, Peoples R China

来源：

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2006年 / 49卷 / 03期

关键词：

GaN; LEDs; Si; wafer bonding; vertical structure;

D O I：

10.1007/s11431-006-0313-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN MQW LEDs, grown by metal-organic chemical vapor deposition (MOCVD) on Si(111) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si(111) substrate and inductively coupled plasma (ICP) etching the transferred LED film to Si-doped layer, a vertical structure GaN blue LEDs were then fabricated. The characteristics of the lateral structure LED (grown on Si) and the vertical structure LED (bonded on Si) were investigated. It shows the performance of vertical structure LEDs had obviously been improved compared to the lateral structure LEDs and the tensile stress in GaN layer of vertical structure LEDs is smaller than that in lateral structure LEDs.

引用

页码：313 / 321

页数：9

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