High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

被引：10

作者：

Ivanov, P. A. ^{[1
]}

Grekhov, I. V. ^{[1
]}

Il'inskaya, N. D. ^{[1
]}

Samsonova, T. P. ^{[1
]}

Potapov, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

SCHOTTKY DIODES; BREAKDOWN; TERMINATION; FABRICATION;

D O I：

10.1134/S1063782609040186

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Planar 4H-SiC p-n junctions with floating guard rings have been fabricated. The main junction and the rings were formed by room temperature boron implantation followed by high temperature annealing. The breakdown voltage of the p-n junctions is 1800 V, which twice exceeds that of similar junctions without guard rings and reaches 72% of the calculated breakdown voltage of a plane-parallel p-n junction with the same epitaxial layer parameters.

引用

页码：505 / 507

页数：3

共 9 条

[1] ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED-THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGES [J].

ANANTHARAM, V ;

BHAT, KN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :939-945

[2] Fabrication and characterization of 4H-SiC pn diode with field limiting ring [J].

Bahng, W ;

Song, GH ;

Kim, HW ;

Seo, KS ;

Kim, NK .

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 :1013-1016

[3]

BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0

[4] High-voltage (900 V) 4H-SiC Schottky diodes with a boron-implanted guard p-n junction [J].

Grekhov, I. V. ;

Ivanov, P. A. ;

Il'inskaya, N. D. ;

Kon'kov, O. I. ;

Potapov, A. S. ;

Samsonova, T. P. .

SEMICONDUCTORS, 2008, 42 (02) :211-214

[5] Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction [J].

Ivanov, P. A. ;

Grekhov, I. V. ;

Potapov, A. S. ;

Samsonova, T. P. .

SEMICONDUCTORS, 2008, 42 (07) :858-861

[6] Ideal static breakdown in high-voltage (1 kV) 4H-SiC p-n junction diodes with guard ring termination [J].

Ivanov, PA ;

Grekhov, IV ;

Il'inskaya, ND ;

Samsonova, TP .

SEMICONDUCTORS, 2005, 39 (12) :1426-1428

[7] Design and fabrication of planar guard ring termination for high-voltage SiC diodes [J].

Sheridan, DC ;

Niu, GF ;

Merrett, JN ;

Cressler, JD ;

Ellis, C ;

Tin, CC .

SOLID-STATE ELECTRONICS, 2000, 44 (08) :1367-1372

[8] AN ANALYSIS FOR THE POTENTIAL OF FLOATING GUARD RINGS [J].

SUH, KD ;

HONG, SW ;

LEE, K ;

KIM, CK .

SOLID-STATE ELECTRONICS, 1990, 33 (09) :1125-1129

[9] 600 v 100 a 4H-SiC junction barrier Schottky diode with guard rings termination [J].

Yamarnoto, Tsuyoshi ;

Endo, Takeshi ;

Kato, Nobuyuki ;

Nakamura, Hiroki ;

Sakakibara, Toshio .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :857-860

← 1 →