Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

被引：67

作者：

Han, Dong-Pyo ^{[1
]}

Zheng, Dong-Guang ^{[1
]}

Oh, Chan-Hyoung ^{[1
]}

Kim, Hyunsung ^{[1
]}

Shim, Jong-In ^{[1
]}

Shin, Dong-Soo ^{[2
,3
]}

Kim, Kyu-Sang ^{[4
]}

机构：

[1] Hanyang Univ, Dept Elect & Commun Engn, Ansan 426791, Gyeonggi Do, South Korea

[2] Hanyang Univ, Dept Appl Phys, Ansan 426791, Gyeonggi Do, South Korea

[3] Hanyang Univ, Dept Bionanotechnol, Ansan 426791, Gyeonggi Do, South Korea

[4] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, Gangwon Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

EFFICIENCY; INTENSITY; CURRENTS; GREEN; BLUE;

D O I：

10.1063/1.4871870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device. (C) 2014 AIP Publishing LLC.

引用

页数：4

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