Millimeter-wave CMOS Power Amplifiers in Common-source MOSFETs

被引：0
作者：
Hwang, Sang-Hyun [1 ]
Lee, Seong-Gwon [1 ]
Lee, Jong-Wook [1 ]
Kim, Byung-Sung [2 ]
机构：
[1] Kyung Hee Univ, Sch Elect & Informat, Suwon 446701, South Korea
[2] Sungkyunkwan Univ, Informat & Commun Engn, Suwon 440746, South Korea
来源：
ISOCC: 2008 INTERNATIONAL SOC DESIGN CONFERENCE, VOLS 1-3 | 2008年
关键词：
millimeter-wave; CMOS; power amplifier; substrate-shield-line;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, CMOS millimeter-wave power amplifiers operating at Q-band (40 GHz) and Ka-band (27 GHz) are presented. The Q-band amplifier was designed using 0.13 mu m standard CMOS process having 6 layers of copper metallization, and the amplifier resulted in a small-signal gain of 9.3 dB at 40 GHz when biased at I-DS = 53 mA and V-DS = 1.5 V. The Ka-band amplifier was design using 0.18 mu m RF CMOS process. The amplifier showed a small-signal gain of 14.5 dB at 27 GHz when biased at I-DS = 94 mA and V-DS = 1.8 V. The results show the potential of CMOS millimeter-wave system-on-chip (SoC) at frequencies greater than 20 GHz.
引用
收藏
页码：403 / +
页数：2
相关论文
共 50 条
  • [31] Design Techniques of Passive Devices for Broadband CMOS Millimeter-Wave Circuits
    Zhao, Dixian
    Zhong, Jiecheng
    Li, Diwei
    Jiang, Ning
    Peng, Na
    Yi, Yongran
    Yu, Chongyu
    2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
  • [32] Phase-Delay Cold-FET Pre-Distortion Linearizer for Millimeter-Wave CMOS Power Amplifiers
    Kao, Kun-Yao
    Hsu, Yu-Chung
    Chen, Kuan-Wei
    Lin, Kun-You
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (12) : 4505 - 4519
  • [33] Millimeter-wave Power Amplifier with Linearization Technique in 0.18-μm CMOS Process
    Choupan, Negar
    Amirkhani, Armin
    Nabavi, Abdolreza
    2021 IRANIAN INTERNATIONAL CONFERENCE ON MICROELECTRONICS (IICM 2021), 2021,
  • [34] A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology
    Bo Chen
    Li Shen
    Supeng Liu
    Yuanjin Zheng
    Jianjun Gao
    Analog Integrated Circuits and Signal Processing, 2014, 81 : 537 - 547
  • [35] Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS
    Agah, Amir
    Dabag, Hayg-Taniel
    Hanafi, Bassel
    Asbeck, Peter M.
    Buckwalter, James F.
    Larson, Lawrence E.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (10) : 2338 - 2350
  • [36] Common-Base/Common-Gate Millimeter-Wave Power Detectors
    Serhan, Ayssar
    Lauga-Larroze, Estelle
    Fournier, Jean-Michel
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (12) : 4483 - 4491
  • [37] Millimeter Wave Transformer Coupled Low-Power and Broadband Power Amplifiers
    Chen, Bo
    Lou Liheng
    Kai, Tang
    Gao, Jianjun
    Zheng Yuanjing
    2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2016,
  • [38] A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology
    Chen, Bo
    Shen, Li
    Liu, Supeng
    Zheng, Yuanjin
    Gao, Jianjun
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2014, 81 (02) : 537 - 547
  • [39] InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers
    Squartecchia, Michele
    Johansen, Tom K.
    Midili, Virginio
    Dupuy, Jean-Yves
    Nodjiadjim, Virginie
    Riet, Muriel
    Konczykowska, Agnieszka
    2018 IEEE MTT-S LATIN AMERICA MICROWAVE CONFERENCE (LAMC 2018), 2018,
  • [40] Cross-Line Characterization for Capacitive Cross Coupling in Differential Millimeter-Wave CMOS Amplifiers
    Tokgoz, Korkut Kaan
    Lim, Kimsrun
    Seo, Yuuki
    Kawai, Seitarou
    Okada, Kenichi
    Matsuzawa, Akira
    2015 IEEE 15TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2015, : 46 - 48
12345