Millimeter-wave CMOS Power Amplifiers in Common-source MOSFETs

被引：0
|
作者：
Hwang, Sang-Hyun [1 ]
Lee, Seong-Gwon [1 ]
Lee, Jong-Wook [1 ]
Kim, Byung-Sung [2 ]
机构：
[1] Kyung Hee Univ, Sch Elect & Informat, Suwon 446701, South Korea
[2] Sungkyunkwan Univ, Informat & Commun Engn, Suwon 440746, South Korea
来源：
ISOCC: 2008 INTERNATIONAL SOC DESIGN CONFERENCE, VOLS 1-3 | 2008年
关键词：
millimeter-wave; CMOS; power amplifier; substrate-shield-line;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, CMOS millimeter-wave power amplifiers operating at Q-band (40 GHz) and Ka-band (27 GHz) are presented. The Q-band amplifier was designed using 0.13 mu m standard CMOS process having 6 layers of copper metallization, and the amplifier resulted in a small-signal gain of 9.3 dB at 40 GHz when biased at I-DS = 53 mA and V-DS = 1.5 V. The Ka-band amplifier was design using 0.18 mu m RF CMOS process. The amplifier showed a small-signal gain of 14.5 dB at 27 GHz when biased at I-DS = 94 mA and V-DS = 1.8 V. The results show the potential of CMOS millimeter-wave system-on-chip (SoC) at frequencies greater than 20 GHz.
引用
收藏
页码：403 / +
页数：2
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