Silicon Carbide for High Signal to Noise Ratio MIPs Detection From Room Temperature to 80°C

被引：9
作者：
Sciortino, S. [1 ,2 ]
Lagomarsino, S. [1 ,2 ]
Nava, F. [3 ,4 ]
机构：
[1] Ist Nazl Fis Nucl, I-50019 Florence, Italy
[2] Univ Florence, Dipartimento Energet, I-50100 Florence, Italy
[3] Ist Nazl Fis Nucl, I-40126 Bologna, Italy
[4] Univ Modena, Dipartimento Fis, I-41100 Emilia, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 04期
关键词：
Minimum ionizing particle detectors; Schottky contacts; silicon carbide; PARTICLE DETECTORS; ELECTRONICS;
D O I：
10.1109/TNS.2009.2023848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The relatively low value of the number of electron-hole (e-h) pairs per micron for Minimum Ionizing Particles (MIPs) in SiC against the value for Si, imposes severe constrains on the crystallographic quality, the thickness and the doping concentration of the SiC epitaxial layer used as detection medium. In this work, a 85 mu m thick 4H-SiC epitaxial layer with a low doping concentration, N(eff) <= 1 x 10(14) cm(-3), was used in order to have a high number (approximate to 4700) of e-h pairs generated by a MIP in the active region. We present experimental data on the charge spectrum for beta MIPs from a (90)Sr source, collected in a temperature range from room temperature up to 81 degrees C.
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收藏
页码：2538 / 2542
页数：5
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