The spin-polarized dwell time in a parallel double δ-magnetic-barrier nanostructure

被引：15
作者：
Chen, Sai-Yan [1 ]
Zhang, Gui-Lian [2 ]
Cao, Xue-Li [1 ]
Peng, Fang-Fang [2 ]
机构：
[1] Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China
[2] Hunan Urban Profess Coll, Changsha 410100, Peoples R China
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2021年 / 20卷 / 02期
关键词：
Magnetic nanostructure; Dwell time; Spin polarization; Temporal spin splitter; SPATIAL SPLITTER; SPINTRONICS;
D O I：
10.1007/s10825-020-01653-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dwell time of electrons in a parallel double delta-magnetic-barrier (MB) nanostructure constructed by patterning an asymmetric ferromagnetic stripe on both the top and bottom of an InAs/AlxIn1-xAs heterostructure is calculated. Because the electron spins interact with the structural magnetic fields, the dwell time depends on the electron spins. Moreover, both the magnitude and sign of the spin-polarized dwell time can be modified by changing the magnetic field, the applied voltage, and the separation between the two delta-MBs. The electron spins can thus be separated in the time dimension, and such a magnetic nanostructure could serve as a controllable temporal spin splitter for use in spintronics device applications.
引用
收藏
页码：785 / 790
页数：6
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