Growth of InAs quantum dots using the strained superlattices and their optical properties

被引：0

作者：

Leem, JY ^{[1
]}

Choi, HK ^{[1
]}

Jeon, MH ^{[1
]}

Lee, JW ^{[1
]}

Cho, GS ^{[1
]}

机构：

[1] InJe Univ, Inst Nanotechnol Appl, Dept Opt Engn, Kyungnam 621749, South Korea

来源：

NANOTECH 2003, VOL 3 | 2003年

关键词：

InAs; quantum dots; strained superlattice; Photoluminescence; annealing;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

we have studied the growth of self-assembled quantum dots (QDs) using Stranski-Krastanow growth mode and strain-reducing layers for long-wavelength applications with narrow linewidth in photoluminescence (PL) emission. InAs QDs were grown on the strained superlattices, GaAs(2nm)/InxGa1-xAs(2nm)(x10) with x = 0.1, 0.32 and 0.52 and capped with same strained superlattices. Their optical properties related to the integrated PL intensity and peak positions were investigated with different temperature ranging from 11 similar to 325 K.

引用

页码：365 / 368

页数：4

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