Hysteretic properties of epitaxial Fe/GaAs(100) ultrathin films under external uniaxial strain

被引:11
作者
Ahmad, E [1 ]
Will, IG
Lu, YX
Xu, YB
Morley, NA
Gibbs, MRJ
机构
[1] Univ York, Dept Elect, Spintron Lab, York YO10 5DD, N Yorkshire, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
关键词
D O I
10.1063/1.1676023
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an experimental and theoretical study of the influence of uniaxial strain on the magnetic properties of Fe/GaAs(100) ultrathin film systems. In-plane tensile strains have been applied along different directions relative to the intrinsic uniaxial magnetic anisotropy axes of the Fe/GaAs(100) films, and the M-H loops were measured. In an attempt to interpret the observed behavior, a phenomenological energy model is considered, which incorporates both intrinsic and strain-induced uniaxial anisotropy terms. Theoretical magnetization reversal loops were obtained from the model, assuming that the magnetoelastic coefficients of the thin films are same as the bulk bcc Fe. The model qualitatively predicted the magnetization loops for all the experimental data, assuming a positive uniaxial anisotropy constant. (C) 2004 American Institute of Physics.
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收藏
页码:6555 / 6557
页数:3
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