Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots

被引：251
作者：
Liu, N [1 ]
Tersoff, J
Baklenov, O
Holmes, AL
Shih, CK
机构：
[1] Univ Texas, Dept Phys, Austin, TX 78712 USA
[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.84.334
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We use cross-sectional scanning tunneling microscopy to examine the shape and composition distribution of In0.5Ga0.5As quantum dots (QDs) formed by capping heteroepitaxial islands. The QDs have a truncated pyramid shape. The composition appears highly nonuniform, with an In-rich core having an inverted-triangle shape. Thus the electronic properties will be drastically altered, relative to the uniform composition generally assumed in device modeling. Theoretical analysis of the QD growth suggests a simple explanation for the unexpected shape of the In-rich core.
引用
收藏
页码：334 / 337
页数：4
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