Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)

被引：13

作者：

Lee, Kyoung-Min ^{[1
]}

Kim, Tae-Hwan ^{[1
]}

Hwang, Jae-Dam ^{[1
]}

Jang, Seunghun ^{[2
]}

Jeong, Kiyoung ^{[2
]}

Han, Moonsup ^{[2
]}

Won, Sunghwan ^{[1
]}

Sok, Junghyun ^{[1
]}

Park, Kyoungwan ^{[1
]}

Hong, Wan-Shick ^{[1
]}

机构：

[1] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea

[2] Univ Seoul, Dept Phys, Seoul 130743, South Korea

来源：

SCRIPTA MATERIALIA | 2009年 / 60卷 / 08期

关键词：

Silicon nanocrystals; Low temperature process; Catalytic CVD; QUANTUM DOTS; EMISSION;

D O I：

10.1016/j.scriptamat.2008.12.054

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (<= 200 degrees C). The size of the silicon nanocrystals was controlled by varying the NH3/SiH4 mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：703 / 705

页数：3

共 9 条

[1] Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation [J].

Brongersma, ML ;

Polman, A ;

Min, KS ;

Boer, E ;

Tambo, T ;

Atwater, HA .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2577-2579

[2] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[3] Origin of visible luminescence in hydrogenated amorphous silicon nitride [J].

Hao, H. L. ;

Wu, L. K. ;

Shen, W. Z. ;

Dekkers, H. F. W. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

[4] Correlation between luminescence and structural properties of Si nanocrystals [J].

Iacona, F ;

Franzò, G ;

Spinella, C .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1295-1303

[5] Excitation and de-excitation properties of silicon quantum dots under electrical pumping [J].

Irrera, A ;

Pacifici, D ;

Miritello, M ;

Franzò, G ;

Priolo, F ;

Iacona, F ;

Sanfilippo, D ;

Di Stefano, G ;

Fallica, PG .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1866-1868

[6] Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3 [J].

Kim, TW ;

Cho, CH ;

Kim, BH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[7] Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C) [J].

Lee, Kyoung-Min ;

Kim, Tae-Hwan ;

Hong, Wan-Shick .

SCRIPTA MATERIALIA, 2008, 59 (11) :1190-1192

[8] Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride [J].

Park, NM ;

Choi, CJ ;

Seong, TY ;

Park, SJ .

PHYSICAL REVIEW LETTERS, 2001, 86 (07) :1355-1357

[9]

SADANAND V, 1995, J APPL PHYS, V77, P6534

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