Efficient electrooptic modulator for a laser beam reflected from the p-n junction of a germanium transistor

This paper presents the response of an electrooptic modulator in the tonal region of frequencies for radiation reflected from the p-n junction of a germanium transistor that operates in the amplification regime. The modulator can be effectively used in fiber-optic communication, optical devices for quantum electronics, and devices for the recording, storage, and processing of optical information. (C) 2009 Optical Society of America.