High quality factor Er3+-activated dielectric microcavity fabricated by rf sputtering

被引：40
作者：
Chiasera, A.
Belli, R.
Bhaktha, S. N. B.
Chiappini, A.
Ferrari, M.
Jestin, Y.
Moser, E.
Righini, G. C.
Tosello, C.
机构：
[1] CNR, IFN, Ist Foton & Nanotecnol, CSMFO Grp, I-38050 Trento, Italy
[2] Univ Trent, Dipartimento Fis, CSMFO Grp, I-38050 Trento, Italy
[3] CNR, Dept Mat & Devices, I-00185 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 17期
关键词：
D O I：
10.1063/1.2364841
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on one-dimensional dielectric photonic crystals activated by Er3+ ion and fabricated by rf-sputtering deposition. The cavity was constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of six pairs of SiO2/TiO2 layers. Near infrared transmittance spectra evidence the presence of a stop band from 1350 to 1850 nm and a cavity resonance centered at 1537 nm. Intensity enhancement and narrowing of the I-4(13/2)-> I-4(15/2) emission band of Er3+ ion, due to the cavity effect, were observed. A cavity quality factor of 171 was achieved. (c) 2006 American Institute of Physics.
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页数：3
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