Full chemical fabrication of SrBi2(Ta,Nb)2O9 ferroelectric thin film capacitors

被引：2

作者：

Yi, JH ^{[1
]}

Thomas, P ^{[1
]}

Manier, M ^{[1
]}

Mercurio, JP ^{[1
]}

机构：

[1] Univ Limoges, Fac Sci, Lab Mat Ceram & Traitements Surface, ESA 6015, F-87060 Limoges, France

来源：

INTEGRATED FERROELECTRICS | 1999年 / 23卷 / 1-4期

关键词：

sol-gel spin-coating; RuO2; SrBi2(Nb; Ta)(2)O-2; ferroelectrics; thin films;

D O I：

10.1080/10584589908210141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrBi2(Ta,Nb)(2)O-9 ferroelectric thin film capacitors with RuO2 electrodes were prepared for the first time by a full chemical route. Stable sols of SrBi2(Ta,Nb)(2)O-9 precursors were obtained from mixtures of niobium (tantalum) ethoxide, bismuth and strontium 2-ethylhexanoates, Ruthenium dioxide precursors was prepared by dissolving an aqueous solution of ruthenium nitrosylnitrate into 2-methoxyethanol. Capacitors were fabricated by sequential spin coating the precursors on silicon wafers according to the sequence Si/RuO2/SrBi2(Ta,Nb)(2)O-9/RuO2. Fully crystallized crack-free materials were obtained by annealing at 700 degrees C for 2 h. Hysteresis loops (3 - 10 V) are similar to those observed using platinum electrodes.

引用

页码：77 / 88

页数：12

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