The role of the substrate on pattern-dependent charging

被引:3
作者
Hwang, GS
Giapis, KP
机构
[1] Div. of Chem. and Chem. Engineering, California Institute of Technology, Pasadena
关键词
D O I
10.1149/1.1838146
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Monte Carlo simulations of charging and profile evolution during plasma etching reveal that the substrate can mediate current imbalance across the wafer. This function couples patterned areas, where the electron shading effect dominates, to substrate areas directly exposed to the plasma. When a net positive current flows through the pattern features to the substrate, increasing the exposed area decreases the substrate potential, thereby causing notching at the connected feature sidewalls to worsen, in agreement with experimental observations.
引用
收藏
页码:L320 / L322
页数:3
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