High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

被引：29

作者：

Lee, J. W. ^{[1
]}

Sone, C. ^{[1
]}

Park, Y. ^{[1
]}

Lee, S. -N. ^{[2
,3
]}

Ryou, J. -H. ^{[4
]}

Dupuis, R. D. ^{[4
]}

Hong, C. -H. ^{[5
,6
]}

Kim, H. ^{[5
,6
]}

机构：

[1] Samsung Electromech Co, Opto Syst Lab, Suwon 443743, South Korea

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea

[5] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, NA, South Korea

[6] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, NA, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

VAPOR-PHASE EPITAXY; INGAN;

D O I：

10.1063/1.3166868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the n-GaN template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude (<1.5 V) and an enhancement in the output power by 41%. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3166868]

引用

页数：3

共 14 条

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